|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
¥182.9696
-
12库存量
-
600预期 2027/4/2
-
新产品
|
Mouser 零件编号
511-SCT019HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
12库存量
600预期 2027/4/2
|
|
|
¥182.9696
|
|
|
¥136.6509
|
|
|
¥104.9657
|
|
|
¥104.4685
|
|
最低： 1
倍数： 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
¥258.0694
-
1,597库存量
|
Mouser 零件编号
511-SCTL90N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597库存量
|
|
|
¥258.0694
|
|
|
¥189.0038
|
|
|
¥184.5403
|
|
|
¥174.7771
|
|
|
¥174.7771
|
|
最低： 1
倍数： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
¥141.8602
-
2,311库存量
|
Mouser 零件编号
511-SCTL35N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,311库存量
|
|
|
¥141.8602
|
|
|
¥100.2536
|
|
|
¥86.106
|
|
|
¥81.473
|
|
|
¥81.473
|
|
最低： 1
倍数： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥172.4606
-
5库存量
|
Mouser 零件编号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
5库存量
|
|
|
¥172.4606
|
|
|
¥127.0572
|
|
|
¥105.881
|
|
|
¥94.3776
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
¥183.625
-
632库存量
-
新产品
|
Mouser 零件编号
511-SCT012W90G3-4AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
632库存量
|
|
|
¥183.625
|
|
|
¥115.7233
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
¥206.5414
-
470库存量
-
新产品
|
Mouser 零件编号
511-SCT016H120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
470库存量
|
|
|
¥206.5414
|
|
|
¥149.3069
|
|
|
¥147.0695
|
|
|
¥142.0184
|
|
|
¥130.1082
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥188.258
-
251库存量
-
600预期 2026/9/25
-
新产品
|
Mouser 零件编号
511-SCT020HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
251库存量
600预期 2026/9/25
|
|
|
¥188.258
|
|
|
¥140.6172
|
|
|
¥121.588
|
|
|
¥107.6099
|
|
最低： 1
倍数： 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥112.5819
-
887库存量
-
新产品
|
Mouser 零件编号
511-SCT027H65G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
887库存量
|
|
|
¥112.5819
|
|
|
¥78.5802
|
|
|
¥63.8563
|
|
|
¥60.3872
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥75.6874
-
1,754库存量
-
新产品
|
Mouser 零件编号
511-SCT055TO65G3
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,754库存量
|
|
|
¥75.6874
|
|
|
¥51.6975
|
|
|
¥42.6801
|
|
|
¥38.7929
|
|
|
¥35.482
|
|
|
¥35.482
|
|
最低： 1
倍数： 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥160.3018
-
465库存量
|
Mouser 零件编号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
465库存量
|
|
|
¥160.3018
|
|
|
¥117.1245
|
|
|
¥89.5864
|
|
|
¥78.8288
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥167.3304
-
362库存量
|
Mouser 零件编号
511-SCT020W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
362库存量
|
|
|
¥167.3304
|
|
|
¥104.638
|
|
|
¥99.5078
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥169.3983
-
293库存量
-
1,200预期 2026/8/31
|
Mouser 零件编号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
293库存量
1,200预期 2026/8/31
|
|
|
¥169.3983
|
|
|
¥120.4354
|
|
|
¥103.8131
|
|
|
¥93.3041
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥156.7423
-
421库存量
|
Mouser 零件编号
511-SCT025W120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
421库存量
|
|
|
¥156.7423
|
|
|
¥97.519
|
|
|
¥91.4848
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥136.9786
-
261库存量
|
Mouser 零件编号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
261库存量
|
|
|
¥136.9786
|
|
|
¥104.5476
|
|
|
¥72.6251
|
|
|
¥61.7884
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
AEC-Q100
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
¥116.3787
-
367库存量
|
Mouser 零件编号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
367库存量
|
|
|
¥116.3787
|
|
|
¥81.3939
|
|
|
¥63.0314
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q100
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥114.8871
-
505库存量
|
Mouser 零件编号
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
505库存量
|
|
|
¥114.8871
|
|
|
¥80.7272
|
|
|
¥62.4551
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥95.4511
-
517库存量
|
Mouser 零件编号
511-SCT040W65G3-4
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
517库存量
|
|
|
¥95.4511
|
|
|
¥57.3249
|
|
|
¥51.1212
|
|
|
¥49.1324
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥110.9999
-
481库存量
|
Mouser 零件编号
511-SCT040W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481库存量
|
|
|
¥110.9999
|
|
|
¥80.3995
|
|
|
¥68.817
|
|
|
¥59.3024
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
¥119.8591
-
301库存量
-
1,200预期 2026/8/10
|
Mouser 零件编号
511-SCT070W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
301库存量
1,200预期 2026/8/10
|
|
|
¥119.8591
|
|
|
¥91.4057
|
|
|
¥70.7267
|
|
|
¥59.89
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
¥182.0543
-
49库存量
-
1,000预期 2026/8/17
|
Mouser 零件编号
511-SCT012H90G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
49库存量
1,000预期 2026/8/17
|
|
|
¥182.0543
|
|
|
¥130.6054
|
|
|
¥118.6161
|
|
|
¥118.537
|
|
|
¥112.2429
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥137.0577
-
66库存量
-
1,000在途量
|
Mouser 零件编号
511-SCT018H65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
66库存量
1,000在途量
|
|
|
¥137.0577
|
|
|
¥96.6941
|
|
|
¥92.3888
|
|
|
¥82.3883
|
|
|
¥76.9304
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
¥112.7401
-
112库存量
|
Mouser 零件编号
511-SCT040HU65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
112库存量
|
|
|
¥112.7401
|
|
|
¥78.6593
|
|
|
¥63.9354
|
|
|
¥60.4663
|
|
最低： 1
倍数： 1
:
600
|
|
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
40 mOhms
|
- 30 V, + 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
¥108.1975
-
73库存量
|
Mouser 零件编号
511-SCT070H120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
73库存量
|
|
|
¥108.1975
|
|
|
¥75.3597
|
|
|
¥60.6358
|
|
|
¥57.404
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
¥100.1745
-
861库存量
|
Mouser 零件编号
511-SCT040H65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
861库存量
|
|
|
¥100.1745
|
|
|
¥69.4837
|
|
|
¥54.8389
|
|
|
¥51.867
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
¥78.6593
-
467库存量
|
Mouser 零件编号
511-SCT1000N170
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
467库存量
|
|
|
¥78.6593
|
|
|
¥53.7654
|
|
|
¥39.7873
|
|
|
¥37.2222
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
