新款MOSFET
英飞凌OptiMOS™ 7 100V车规级功率MOSFET是先进的N沟道设备，专为现代汽车架构中的高效功率开关而设计。这些100V MOSFET基于OptiMOS™ 7技术打造，可提供极低的导通电阻、快速开关特性和高雪崩能力，能够在保持出色耐用性和热性能的同时，降低导通损耗和开关损耗。这些特性支持在紧凑型封装中实现高功率密度设计，非常适合要求可靠性、效率和稳定运行的严苛汽车环境。
-
Infineon Technologies OptiMOS™ 7 100V车规级功率MOSFET先进的N沟道设备，专为高效功率开关而设计。2026/5/27
-
Texas Instruments 2N7002L 6V N沟道MOSFET旨在最大限度地降低导通电阻，同时保持快速的开关性能。2026/5/18 -
onsemi NVBYST0D8N08X单N沟道功率MOSFET针对高压运行进行了优化，并可承受快速开关及大电流应力。2026/4/14 -
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFETLow switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.2026/4/7 -
onsemi NTMFD0D9N02P1E MOSFET一款双N沟道MOSFET，采用低Rg设计，适用于快速开关应用。2026/4/6 -
Toshiba N沟道/P沟道功率MOSFET适用于高速开关、电源管理开关、直流-直流转换器和电机驱动器。2026/3/31 -
STMicroelectronics STL059N4S8AG功率MOSFET一款采用Smart STripFET F8技术设计的40V N沟道增强模式功率MOSFET。2026/3/31 -
Infineon Technologies OptiMOS™ 6 60V功率MOSFET凭借强大的功率MOSFET技术，为OptiMOS 5提供卓越的性能。2026/3/27 -
Infineon Technologies N沟道OptiMOS™ 7 25V功率MOSFET性能针对应用而优化，可为数据中心、服务器及人工智能提供最佳性能。2026/3/27 -
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFETDelivers ultra-low conduction and switching losses in a robust TO-220 package.2026/3/24 -
Infineon Technologies OptiMOS™ 8功率MOSFETN沟道、标准电平80V或100V MOSFET，具有非常低的导通电阻（RDS(ON)）。2026/3/17 -
onsemi NVMFD5873NL双N沟道功率MOSFET专为紧凑高效的设计打造，兼具卓越的热性能。2026/3/13 -
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.2026/3/10 -
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.2026/3/10 -
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.2026/3/10 -
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.2026/3/10 -
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFETSupports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.2026/3/6 -
Infineon Technologies N沟道OptiMOS™ 7 80V功率MOSFET80V N沟道标准电平设备，热阻优异，PG‑TDSON‑8封装。2026/3/5 -
iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETsFeatures low switching losses, QSW, and EOSS, suitable for high-efficiency SMPS and motor drives.2026/2/19 -
IXYS X4级功率MOSFET导通电阻和导通损耗低，效率更高。2026/2/2 -
onsemi NVBYST0D6N08X 80V N沟道功率MOSFET该器件具有低QRR和软恢复体二极管，采用TCPAK1012 (TopCool) 封装。2025/12/26 -
Infineon Technologies OptiMOS™ 6 80V功率MOSFET凭借广泛的产品组合确立了行业性能基准。2025/12/23 -
onsemi NVMFD5877NL双N沟道MOSFET专为紧凑高效的设计而打造，具有优异的热性能。2025/12/19 -
onsemi FDC642P-F085小信号MOSFET采用高性能沟槽技术，具备极低RDS(on)和快速开关速度。2025/11/25 -
onsemi NTTFS007P02P8 P沟道低/中压MOSFET采用PowerTrench技术打造，具备极低RDS(on)、快速开关性能及耐用性。2025/11/25