新款MOSFET
STMicroelectronics STH4N150-2AG N-Channel Power MOSFET is designed to deliver high voltage and robustness for the automotive market. This MOSFET is built using PowerMESH™ technology; the device combines a very high 1500V drain-source voltage rating with low gate charge and robust avalanche capability. The STH4N150-2AG MOSFET is automotive-grade, AEC-Q101-qualified, and available in an H2PAK-2 package. This device is suitable for high voltage, automotive, auxiliary, and switching applications.
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STMicroelectronics STH4N150-2AG N-Channel Power MOSFETDesigned to ensure a high level of voltage and robustness for the automotive applications.2026/8/10
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onsemi NVNJWS1K6N061L N 沟道 MOSFET具有低RDS(on)和低栅极阈值，且集成ESD保护。2026/7/30 -
ROHM Semiconductor 600V超接合点（SJ）MOSFET紧凑、扁平封装选项，提供出色的散热性能。2026/7/21 -
Infineon Technologies OptiMOS™ 7 100V车规级功率MOSFET先进的N沟道设备，专为高效功率开关而设计。2026/5/27 -
Texas Instruments 2N7002L 6V N沟道MOSFET旨在最大限度地降低导通电阻，同时保持快速的开关性能。2026/5/18 -
onsemi NVBYST0D8N08X单N沟道功率MOSFET针对高压运行进行了优化，并可承受快速开关及大电流应力。2026/4/14 -
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFETLow switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.2026/4/7 -
onsemi NTMFD0D9N02P1E MOSFET一款双N沟道MOSFET，采用低Rg设计，适用于快速开关应用。2026/4/6 -
Toshiba N沟道/P沟道功率MOSFET适用于高速开关、电源管理开关、直流-直流转换器和电机驱动器。2026/3/31 -
STMicroelectronics STL059N4S8AG功率MOSFET一款采用Smart STripFET F8技术设计的40V N沟道增强模式功率MOSFET。2026/3/31 -
Infineon Technologies OptiMOS™ 6 60V功率MOSFET凭借强大的功率MOSFET技术，为OptiMOS 5提供卓越的性能。2026/3/27 -
Infineon Technologies N沟道OptiMOS™ 7 25V功率MOSFET性能针对应用而优化，可为数据中心、服务器及人工智能提供最佳性能。2026/3/27 -
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFETDelivers ultra-low conduction and switching losses in a robust TO-220 package.2026/3/24 -
Infineon Technologies OptiMOS™ 8功率MOSFETN沟道、标准电平80V或100V MOSFET，具有非常低的导通电阻（RDS(ON)）。2026/3/17 -
onsemi NVMFD5873NL双N沟道功率MOSFET专为紧凑高效的设计打造，兼具卓越的热性能。2026/3/13 -
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.2026/3/10 -
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.2026/3/10 -
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.2026/3/10 -
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.2026/3/10 -
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFETSupports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.2026/3/6 -
Infineon Technologies N沟道OptiMOS™ 7 80V功率MOSFET80V N沟道标准电平设备，热阻优异，PG‑TDSON‑8封装。2026/3/5 -
iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETsFeatures low switching losses, QSW, and EOSS, suitable for high-efficiency SMPS and motor drives.2026/2/19 -
IXYS X4级功率MOSFET导通电阻和导通损耗低，效率更高。2026/2/2 -
onsemi NVBYST0D6N08X 80V N沟道功率MOSFET该器件具有低QRR和软恢复体二极管，采用TCPAK1012 (TopCool) 封装。2025/12/26 -
Infineon Technologies OptiMOS™ 6 80V功率MOSFET凭借广泛的产品组合确立了行业性能基准。2025/12/23