ROHM Semiconductor AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

The AEC-Q101 qualified MOSFETs also provide a drain source on state resistance range of 17mΩ to 120mΩ (Typ) for 650V drain-source voltage and 22mΩ to 160mΩ (Typ) for 1200V drain-source voltage. Additionally, the devices feature a junction temperature up to 175°C, with an available package type of TO-247N.

Features

  • Qualified to AEC-Q101
  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • RoHS compliant

Applications

  • Automobiles
  • Switch-mode power supplies

xEV Application Graph

Block Diagram - ROHM Semiconductor AEC-Q101 SiC Power MOSFETs

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发布日期: 2019-03-12 | 更新日期: 2025-10-08