Vishay / Siliconix TrenchFET® MOSFETs
Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
Features
- P-Channel MOSFETs
- Reduced on-resistance by up to 45% for p-channel devices
- Provides lower conduction losses, saving power
- Longer time between charges for battery-powered applications
- Employs either Gen-III or Gen-IV technology
- Greener use of power
- Gen-IV P-channel MOSFETs
- Offer low on-resistance
- Come in a thermally enhanced compact package
- Variety of package sizes, from PowerPAK SO-8 down to 1.6mm x 1.6mm PowerPAK SC-75
- Breakdown voltage 12V to 200V
- N-Channel MOSFETs
- 30V to 250V drain-source breakdown voltage
- 50A to 478A drain current
- Up to 27mΩ resistance rating
- ThunderFET power (depending on the model)
- 125W to 375W power dissipation range
- Employs either Gen-IV or Gen-V technology
Applications
- P-Channel
- Load switches
- Smartphones
- PDAs
- MP3 players
- Digital cameras
- Camcorders
- Battery and circuit protection
- Motor drive control
- Adapter and charger switch
- Load switch
- Battery management
- N-Channel
- Synchronous rectification
- Synchronous buck converter
- DC/DC converter
- Primary side switch
- Power tools
- Motor drive switch
- DC/AC inverters
- Battery management
- LED driver
- Load switch
- Power supplies
- OR-ing and hot swap switch
Featured Products
Vishay PowerPAK® 1212 MOSFET
非常适用于开关应用，裸片导通电阻约为1mΩ。
Vishay / Siliconix SiS178LDN N沟道70V (D-S) MOSFET
采用PowerPAK® 1212-8单封装和TrenchFET Gen IV技术。
Vishay / Siliconix SiS176LDN N沟道70V (D-S) MOSFET
采用TrenchFET® 第四代功率MOSFET技术和PowerPAK® 1212-8单封装。
Vishay / Siliconix TrenchFET®第五代功率MOSFET，带VDS
具有非常低的RDS x Qg 品质因数（FOM），可提高功率转换效率。
Vishay / Siliconix SiR186LDP N沟道60V (D-S) MOSFET
采用TrenchFET® Gen IV功率MOSFET技术，具有非常低的RDS Qg FOM 。
Vishay / Siliconix SQJ211ELP汽车用P沟道100V MOSFET
具有-100VDS漏源电流，采用PowerPAK® SO-8L封装（带翼形引线）。
Vishay / Siliconix SUM40014M N沟道40V MOSFET
提供40VDS漏源电压，采用单配置D2PAK封装，具有ThunderFET®功率。
Vishay / Siliconix SIR873DP 150V P通道MOSFET
150V P通道MOSFET采用PowerPAK®封装，应用十分广泛。
Vishay / Siliconix SiA429DJT 20V P通道MOSFET
型面小于0.8mm的P通道器件中具有业界最低的导通电阻。
Vishay / Siliconix Power MOSFETs
Low-to-high power MOSFETs that meet the increasing demands of applications in growth markets.
Vishay / Siliconix Si3129DV P沟道80V (D-S) MOSFET
采用TSOP-6单封装，工作结温范围为-55°C至150°C。
Vishay / Siliconix Si7252ADP双N沟道100V (D-S) MOSFET
提供优化的PWM，设计用于系统电源直流/直流应用。
Vishay / Siliconix SiAxDJ P-Channel TrenchFET® Power MOSFETs
Thermally Enhanced PowerPAK®; 2.05mm x 2.05mm footprint area, and low On-Resistance.
Vishay Si71 MOSFET
TrenchFET® 第三代功率MOSFET技术，采用紧凑型PowerPAK® 1212-8和PowerPak SO-8封装。
Vishay Si72 MOSFET
采用TrenchFET® 功率MOSFET技术，以增强性能。
Vishay Si74 MOSFET
采用TrenchFET® 技术，可降低导通电阻，确保可靠性和性能。
Vishay Si79 MOSFET
采用先进的ThunderFET® 技术，可平衡RDS(on)、Qg、Qsw和Qoss等参数。
Vishay Semiconductors Si76系列MOSFET
TrenchFET® 功率MOSFET，用于直流/直流转换器和OR-ing中的低侧开关。
Vishay IRL功率MOSFET
在快速开关、坚固设计、低导通电阻和高性价比之间实现了最佳平衡。
Associated Solutions
Vishay 工业电源解决方案
业界最广泛的半导体和无源元件产品组合，适用于工业电源应用。
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