|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
¥103.5645
-
57库存量
|
Mouser 零件编号
511-SCT055W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
57库存量
|
|
|
¥103.5645
|
|
|
¥84.2867
|
|
|
¥70.2295
|
|
|
¥51.1212
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
¥100.6604
-
85库存量
|
Mouser 零件编号
511-SCT070H120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85库存量
|
|
|
¥100.6604
|
|
|
¥70.4781
|
|
|
¥60.6358
|
|
|
¥60.5454
|
|
|
¥49.4601
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
¥112.9096
-
73库存量
-
1,200预期 2026/3/16
|
Mouser 零件编号
511-SCT070HU120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73库存量
1,200预期 2026/3/16
|
|
|
¥112.9096
|
|
|
¥79.0774
|
|
|
¥69.9809
|
|
|
¥57.0763
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
¥73.45
-
592库存量
|
Mouser 零件编号
511-SCT1000N170
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
592库存量
|
|
|
¥73.45
|
|
|
¥50.2963
|
|
|
¥37.1431
|
|
|
¥32.5892
|
|
|
¥32.5101
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
¥131.5207
-
510库存量
|
Mouser 零件编号
511-SCT20N120AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510库存量
|
|
|
¥131.5207
|
|
|
¥97.0218
|
|
|
¥67.574
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
¥241.1985
-
1,597库存量
|
Mouser 零件编号
511-SCTL90N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597库存量
|
|
|
¥241.1985
|
|
|
¥184.5403
|
|
|
¥150.7081
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥142.267
-
593库存量
|
Mouser 零件编号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593库存量
|
|
|
¥142.267
|
|
|
¥88.253
|
|
|
¥77.0886
|
|
|
¥77.0095
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
¥211.9993
-
317库存量
-
NRND
|
Mouser 零件编号
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
317库存量
|
|
|
¥211.9993
|
|
|
¥188.0998
|
|
|
¥186.111
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
¥145.2502
-
90库存量
|
Mouser 零件编号
511-SCTWA40N12G24AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90库存量
|
|
|
¥145.2502
|
|
|
¥103.2255
|
|
|
¥79.5746
|
|
|
¥79.0774
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
¥141.9393
-
9库存量
-
2,000预期 2026/10/12
-
新产品
|
Mouser 零件编号
511-SCT025H120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
9库存量
2,000预期 2026/10/12
|
|
|
¥141.9393
|
|
|
¥100.7508
|
|
|
¥94.0499
|
|
|
¥76.7609
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
¥238.9611
-
151库存量
|
Mouser 零件编号
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
151库存量
|
|
|
¥238.9611
|
|
|
¥182.1447
|
|
|
¥168.1666
|
|
|
¥145.2502
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCTWA70N120G2V-4
- STMicroelectronics
-
1:
¥244.0913
-
28库存量
|
Mouser 零件编号
511-SCTWA70N120G2V-4
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
|
|
28库存量
|
|
|
¥244.0913
|
|
|
¥174.9466
|
|
|
¥171.2176
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HIP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
30 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
¥200.4168
-
600预期 2026/10/26
|
Mouser 零件编号
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600预期 2026/10/26
|
|
|
¥200.4168
|
|
|
¥164.0308
|
|
|
¥144.8321
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥150.29
-
1,200在途量
|
Mouser 零件编号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
1,200在途量
在途量:
600 预期 2026/5/1
600 预期 2026/8/10
|
|
|
¥150.29
|
|
|
¥120.3563
|
|
|
¥104.0617
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
¥104.8866
-
996预期 2026/4/22
|
Mouser 零件编号
511-SCT040H120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996预期 2026/4/22
|
|
|
¥104.8866
|
|
|
¥73.5291
|
|
|
¥63.9354
|
|
|
¥63.8563
|
|
|
¥52.1947
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
¥103.4741
-
1,113预期 2026/3/18
|
Mouser 零件编号
511-SCT055HU65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,113预期 2026/3/18
|
|
|
¥103.4741
|
|
|
¥72.9528
|
|
|
¥63.28
|
|
|
¥51.6975
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
¥75.936
-
844预期 2026/11/23
|
Mouser 零件编号
511-SCT10N120AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844预期 2026/11/23
|
|
|
¥75.936
|
|
|
¥43.0078
|
|
|
¥34.1599
|
|
|
¥34.0808
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
¥138.7979
-
100在途量
-
新产品
|
Mouser 零件编号
511-SCT025H120G3-7
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100在途量
|
|
|
¥138.7979
|
|
|
¥107.3613
|
|
|
¥92.8069
|
|
|
¥92.8069
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
¥94.129
-
100在途量
-
新产品
|
Mouser 零件编号
511-SCT040W120G3-4
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100在途量
|
|
|
¥94.129
|
|
|
¥76.6818
|
|
|
¥63.8563
|
|
|
¥56.9068
|
|
|
¥48.3075
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
-
1:
¥233.5032
-
69预期 2026/3/16
|
Mouser 零件编号
511-SCTWA90N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
|
|
69预期 2026/3/16
|
|
|
¥233.5032
|
|
|
¥151.2844
|
|
|
¥144.753
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3-7
- STMicroelectronics
-
1,000:
¥41.8552
-
无库存交货期 16 周
-
新产品
|
Mouser 零件编号
511-SCT070H120G3-7
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
无库存交货期 16 周
|
|
最低： 1,000
倍数： 1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
¥90.4113
-
无库存交货期 17 周
-
新产品
|
Mouser 零件编号
511-SCT070W120G3-4
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
无库存交货期 17 周
|
|
|
¥90.4113
|
|
|
¥54.014
|
|
|
¥45.991
|
|
|
¥42.8496
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA40N120G2V
- STMicroelectronics
-
1:
¥149.2165
-
无库存交货期 32 周
-
NRND
|
Mouser 零件编号
511-SCTWA40N120G2V
NRND
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
|
|
无库存交货期 32 周
|
|
|
¥149.2165
|
|
|
¥113.6554
|
|
|
¥95.5415
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
受限供货情况
-
新产品
|
Mouser 零件编号
511-SCT027HU65G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
- SCT011H75G3AG
- STMicroelectronics
-
受限供货情况
-
新产品
|
Mouser 零件编号
511-SCT011H75G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
