IXYS HiPerFET™ Power MOSFETs
IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Features
- IXYS advanced low gate charge process
- International standard packages
- Low gate charge and capacitance
- Low RDS(on)
- Unclamped Inductive Switching (UIS) rated
- Molding epoxies meet UL94V-0 flammability classification
Associated Products
IXYS X3级HiPerFET™功率MOSFET
N沟道、增强模式、耐雪崩MOSFET。
IXYS HiPerFET和MOSFET功率器件
采用SMPD封装，重量比同类传统功率模块轻得多。
IXYS 标准N沟道HiPerFET™功率MOSFET
用于硬开关和谐振模式应用，具有低栅极电荷和出色的耐用性。
IXYS Q级HiPerFET™功率MOSFET
用于硬开关 & 谐振模式应用，具有低栅极电荷 & 出色的耐用性。
IXYS Q3级HiperFET™功率MOSFET
各种具有出色电源开关性能的器件。
IXYS Gen2 Trench Gate Power MOSFETs
Offered with drain-to-source voltage ratings from 40V to 170V and high current of up to 600A.
IXYS 60V TrenchT3 HiPerFET功率MOSFET
具有超低导通电阻的坚固器件，设计用于工业功率转换应用。
IXYS 40V TrenchT4 功率 MOSFET
采用国际标准封装的易于安装 N 通道增强型 MOSFET。
IXYS X-Class Power MOSFETs
Easy-to-mount high-power density N-Channel Enhancement Mode MOSFETs with a low RDS(ON) and QG.
IXYS X2级HiPerFET™功率MOSFET
具有低栅极电荷，用于高效率和高速功率开关应用。
IXYS X3级HiPerFET™功率MOSFET
采用N沟道增强模式的耐雪崩快速体二极管。
IXYS X4级135V至150V功率MOSFET
具有极低的电阻RDS(on)和栅极电荷Qg的功率MOSFET。
IXYS IXT 200V X4超结功率MOSFET
N通道器件，具有10.6mΩ、13mΩ或21mΩ导通电阻 (RDS(on)) 和200V最大漏源电压。