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ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™with Molded Modules
03/17/2026
03/17/2026
该器件额定电压为1200V,外形尺寸为41.6mm × 52.5mm ,搭载第四代SiC MOSFET元件。
ROHM Semiconductor RH7G03BBJFRA P-Channel Power MOSFET
11/18/2025
11/18/2025
This MOSFET has a VDSS rating of -40V and an ID rating (VDS = -10V) of ±22A.
ROHM Semiconductor RJ1P10BAT P-Channel Power MOSFET
11/18/2025
11/18/2025
This MOSFET has a VDSS rating of -100V and an ID rating (VDS = 10V) of ±105A.
ROHM Semiconductor SCT2H12NWB 1700V N沟道SiC功率MOSFET
08/21/2025
08/21/2025
一款额定漏源电压 (VDSS) 为1700V、额定漏极连续电流 (ID) 为3.9A的SiC MOSFET。
ROHM Semiconductor RH7L04 60 V N通道功率MOSFET
08/19/2025
08/19/2025
车规级MOSFET,额定VDSS 为60V,额定ID 为±40A,符合AEC-Q101认证要求。
ROHM Semiconductor RH7E04BBJFRA -30V P沟道功率MOSFET
08/19/2025
08/19/2025
一款车规级MOSFET,额定VDSS 为-30V、额定ID 为±40A,符合AEC-Q101认证要求。
ROHM Semiconductor RQ3G120BKFRA 40V N沟道功率MOSFET
08/19/2025
08/19/2025
一款车规级MOSFET,额定VDSS 为40V,额定ID 为±12A,符合AEC-Q101认证要求。
ROHM Semiconductor RH7L03 60 V N沟道功率MOSFET
08/19/2025
08/19/2025
一款额定VDSS 为60V、额定ID 为±35A的车规级MOSFET,符合AEC-Q101认证要求。
ROHM Semiconductor RH7G04 40 V N通道功率MOSFET
08/19/2025
08/19/2025
该设备为车规级MOSFET,额定VDSS 为40V,额定ID为±40A,符合AEC-Q101认证要求。
ROHM Semiconductor RH7P04BBKFRA 100V N沟道功率MOSFET
08/19/2025
08/19/2025
一款车规级MOSFET,其额定VDSS 为100V,额定ID 为±40A,符合AEC-Q101认证要求。
ROHM Semiconductor RH7L04CBJFRA -60V P沟道功率MOSFET
08/19/2025
08/19/2025
一款车规级MOSFET,额定VDSS 为-60V,额定ID 为±36A,符合AEC-Q101认证要求。
ROHM Semiconductor RQ5G040AT -40V P沟道小信号MOSFET
08/19/2025
08/19/2025
一款额定漏源电压 (VDSS) 为-40V,额定漏极连续电流 (ID) 为±4.0A的MOSFET。
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onsemi GaNEXUS™ GaN FETs
07/08/2026
07/08/2026
Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.
Bourns CDDFN2 Surface Mount TVS Diodes
07/07/2026
07/07/2026
ESD, EFT, and surge protection for external ports of electronic devices, limiting critical damage.
Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode
06/29/2026
06/29/2026
Offers a repetitive reverse voltage rating of 1200V and a forward current capability of 2A.
Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
06/18/2026
06/18/2026
Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.
Bourns CDSOT23-SM712-Q表面贴装TVS二极管
05/12/2026
05/12/2026
符合IEC 61000-4-2、IEC 61000-4-4和IEC 61000-4-5标准,为数据端口提供保护。
Diotec Semiconductor BAS70-05W Schottky Diode
04/16/2026
04/16/2026
Designed for high‑speed switching and voltage clamping in space‑constrained applications.
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